Ion Source for Ion Implementation Machine
- Categories:Electronic Semiconductor Industry
- Author:戴蓓蓓 13683852039
- Origin:
- Time of issue:2017-11-21 00:00
- Views:
(Summary description)Tungsten-molybdenum components of ion sources of ion implementation machines in the semiconductor industry Ion implementation is a very important technology in modern integrated circuit manufacturing. Ion implementation machines are applied to realize the doping of semiconductors, namely tungsten filaments are used as emission electrons on the cathodes to impact gas molecules containing specific impurity elements; specific impurity atoms generating ionization are stricken onto the surfaces of silicon single crystal wafers after acceleration in electrostatic fields and stricken into semiconductors to change the conduction characteristics and finally form transistor structures.
Ion Source for Ion Implementation Machine
(Summary description)Tungsten-molybdenum components of ion sources of ion implementation machines in the semiconductor industry
Ion implementation is a very important technology in modern integrated circuit manufacturing. Ion implementation machines are applied to realize the doping of semiconductors, namely tungsten filaments are used as emission electrons on the cathodes to impact gas molecules containing specific impurity elements; specific impurity atoms generating ionization are stricken onto the surfaces of silicon single crystal wafers after acceleration in electrostatic fields and stricken into semiconductors to change the conduction characteristics and finally form transistor structures.
- Categories:Electronic Semiconductor Industry
- Author:戴蓓蓓 13683852039
- Origin:
- Time of issue:2017-11-21 00:00
- Views:
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Tungsten-molybdenum components of ion sources of ion implementation machines in the semiconductor industry
Ion implementation is a very important technology in modern integrated circuit manufacturing. Ion implementation machines are applied to realize the doping of semiconductors, namely tungsten filaments are used as emission electrons on the cathodes to impact gas molecules containing specific impurity elements; specific impurity atoms generating ionization are stricken onto the surfaces of silicon single crystal wafers after acceleration in electrostatic fields and stricken into semiconductors to change the conduction characteristics and finally form transistor structures.