Sapphire crystal growing furnace thermal field can be divided into solution growth, melt growth and vapor phase growth in which melt growth has become the commonest crystal growth mode of preparing large-sized crystals in specific shapes according to high growth speed, high purity, good crystal integrity and other features. At present, methods for growing sapphire crystals artificially in a melt growth mode mainly include verneuil method, czochralski method, zone melting method, crucible movement method, heat exchange method, temperature gradient method, kyropoulos method, etc. However, the above methods have their respective defects and boundedness, which can difficultly meet the requirements of large dimension, high quality and low-temperature development of sapphire crystals in the future. For example, both the quality and dimensions of crystals growing by verneuil method, czochralski method, zone melting method and other methods are limited, which can difficultly meet the requirement of optical devices on high performance; sapphire crystals growing by heat exchange method, temperature gradient method, kyropoulos method and other methods have large dimensions and better quality; however, a large quantity of helium needs to be used as a coolant in the heat exchange method; sapphire crystal blanks growing by temperature gradient method and kyropoulos method need to be subjected to high-temperature annealing treatment, and subsequent treatment processes of the blanks are relatively complicated and high in cost.
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